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AP2305AGN 沟道 -30V -5.6A MOS(场效应管)
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-30
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=-1mA
-
-0.1
-
V/
℃
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-10V, I
D
=-3.2A
-
-
60
m
Ω
V
GS
=-4.5V, I
D
=-3.0A
-
-
80
m
Ω
V
GS
=-2.5V, I
D
=-2.0A
-
-
150
m
Ω
V
GS
=-1.8V, I
D
=-1.0A
-
-
250
m
Ω
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-0.5
-
-1.2
V
g
fs
Forward Transconductance
V
DS
=-5V, I
D
=-3.0A
-
9
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-30V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-24V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=-3.2A
-
10
18
nC
Q
gs
Gate-Source Charge
V
DS
=-24V
-
1.8
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
3.6
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-15V
-
7
-
ns
t
r
Rise Time
I
D
=-3.2A
-
15
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
Ω
,
V
GS
=-10V
-
21
-
ns
t
f
Fall Time
R
D
=4.6
Ω
-
15
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
735
1325
pF
C
oss
Output Capacitance
V
DS
=-25V
-
100
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
80
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
SD
Forward On Voltage
2
I
S
=-1.2A, V
GS
=0V
-
-
-1.2
V
trr
Reverse Recovery Time
I
S
=-3.2A, V
GS
=0V,
-
24
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/μs
-
19
-
nC
询价
